Correlation between Chemical andElectrical Properties ofSiNxDeposed byPECVD.Impact onRFMEMS devices

Theinfluence ofdifferent dielectrics types on theswitching behavior andreliability ofcapacitive RF MEMS switches, elaborated byPECVD,isinvestigated. Transient currents measurements inSiNxweremade versus field, temperature andtime. These results suggest adominant conduction mechanism andallow topredict theamountofcharge injected into thedielectric andthe charge/discharging kinetics processes. Thedeposition parameters effects, evaluated byFTIR,inorder to identify thechemical bondinthedielectric, canexplain thecharging behavior. Goodagreement wasobtained between transient currents measurements andFTIR.