Negative magnetoresistance of SiGe quantum wells doped with boron
2002
Abstract Negative magnetoresistance is observed in boron-doped SiGe/Si quantum-well structures. The effect of a random potential caused by charged boron δ -layers in barriers on quantum corrections to the conductivity is found. Elastic and inelastic scattering times of holes as well as the magnitude of the random potential are determined.
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