A 2 V 2.4 GHz fully integrated CMOS LNA

A fully integrated 2 V 2.4 GHz ISM (Industrial Scientific and Medical) frequency band LNA (Low Noise amplifier) is proposed. The LNA is designed with 0.3 /spl mu/m process. The noise figure including the resistance of inductors has been considered. An inductor is added between the MOS of cascode circuits to improve the matching and increase power gain. With a 2 V supply, the LNA achieves a power gain (S21) of 19.9 dB, noise figure of 2.5 dB, and power dissipation 14.7 mW. Also, the input third-order intercept point (IIP3) is 2 dBm, and an input 1-dB compression point (P/sub 1 dB/) is -12 dBm. The reverse isolation is -47.8 dB.