Development of sol-gel fluorine doped tin oxide film on glass

2003 
Conductive and transparent thin films of F-doped 8n02 were deposited on soda lime silica glass by utilizing the sol-gel dipping technique. The chosen composition of Sn : F in the precursor sol was in the range 99: 1 to 97 : 3 (atomic ratio). The developed films (thickness 0.1 - 0.8 µm; refractive index 1.6-2.0) were of cassiterite Sn02 phase. Resistivity of the films was V-type with increase of F content and passed through a minimum at Sn : F = 97.5 : 2.5. Visible transmission (89%-50%) of the films was dependent on film thickness and its refractive index. Microstructure of the films indicated porous surface feature
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