Architecture, development and implementation of a SWIR to visible integrated up-conversion imaging device
2016
A new concept of short wavelength infrared (SWIR) to visible upconversion integrated
imaging device is proposed, modeled and some initial measured results are presented. The
device is a hybrid inorganic-organic device that comprises six nano-metric scale sub-layers
grown on n-type GaAs substrates. The first layer is a ~300nm thick PbSe nano-columnar
absorber layer grown in (111) orientation to the substrate plan (100), with a diameter of 8-
10nm and therefore exhibit quantum confinement effects parallel to the substrate and bulk
properties perpendicular to it. The advantage of this structure is the high oscillator strength
and hence absorption to incoming SWIR photons while maintaining the high bulk mobility
of photo-excited charges along the columns. The top of the PbSe absorber layer is coated
with 20nm thick metal layer that serves as a dual sided mirror, as well as a potentially
surface plasmon enhanced absorption in the PbSe nano-columns layer. The photo-excited
charges (holes and electrons in opposite directions) are drifted under an external applied
field to the OLED section (that is composed of a hole transport layer, an emission layer and
an electron transport layer) where they recombine with injected electron from the
transparent cathode and emit visible light through this cathode. Due to the high absorption
and enhanced transport properties this architecture has the potential of high quantum
efficiency, low cost and easy implementation in any optical system. As a bench-mark,
alternative concept where InGaAs/InP heterojunction couple to liquid crystal optical spatial
light modulator (OSLM) structure was built that shows a full upconversion to visible of
1550nm laser light.
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