Low polarisation sensitivity buried heterostructure electroabsorption modulators for ultra high speed networks

D. G. Moodie,P. Cannard,A.J. Dann,D.D. Marcenac,C. W. Ford,J. Reed,R. Moore,J.K. Lucek,Andrew D. Ellis

Low polarisation sensitivity buried heterostructure electroabsorption modulators for ultra high speed networks

1997

D. G. Moodie
P. Cannard
A.J. Dann
D.D. Marcenac
C. W. Ford
J. Reed
R. Moore
J.K. Lucek
Andrew D. Ellis

Packaged low polarisation sensitivity InGaAs-InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160 Gbit/s OTDM systems is experimentally assessed.

Keywords:

Heterojunction
Optics
Electronic engineering
Polarization (waves)
Engineering
Wavelength-division multiplexing
Gigabit
ultra high speed

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