High dose arsenic low energy, phosphorus, safe handling of boron implanted wafer

A method of preventing the formation of toxic gases after injection process. A when injected into film disposed on a substrate, certain dopants may react when exposed to moisture, to form a toxic gas and / or flammable gases. By exposing in situ doped film to an oxygen-containing compound, and the reaction dopant shallowly implanted into the layer stack to form a dopant oxide, thereby potentially toxic gas and / or flammable gases reduce the formation. Instead, formed in situ on the membrane capping layer is implanted, it is also possible to reduce the potential generation of hazardous gas and / or flammable gases. .TECHNICAL