High Performance Double-Gate Graphene Radio-Frequency Transistors

Despite the demonstrated high current gain cutoff frequency $({{f}_{\text{T}}})$, most graphene transistors show significantly lower maximum oscillation frequency $({{f}_{\max }})$, which is a crucial figure of merit that determines the transistors’ power amplification ability. This work presents a new graphene device structure with double-gate synchronously control the graphene channel. The structure possesses several advantages over conventional top gate structures, including low gate resistance and high on/off ratio. f max ~ 50% higher than $({{f}_{\text{T}}})$ is achieved from devices with different gate length.