Time‐resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate

Time-resolved photoluminescence (PL) spectroscopy was performed at 77 K for the near band edge emission band in a GaN/AlGaN single quantum well structure grown on a (111) Si substrate. The near band edge emission band was decomposed into several peaks characteristic to structural defects/dislocations in the sample. By using PL intensity correlation method, the decay time constant of the peak intensity was investigated. The radiative recombination time for the neutral-donor-bound exciton (DoX) peak was on the order of 800 ps, while the time constants for the defect/dislocation related peaks depended on the wavelength or the associated energy level ranging between 550 ps and 1,000 ps. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)