TRANSPORT PROPERTIES OF HYDROGENATED P-GAINAS DOPED WITH CARBON

Highly carbon‐doped Ga0.47In0.53As layers grown by chemical beam epitaxy have been exposed to a deuterium plasma. Deuterium diffusion profiles reflect very strong C–D interactions. Concerning electronic transport properties, from p‐type when as‐grown, these GaInAs samples turn to n‐type after plasma exposure. Annealings of deuterated layers have also been performed. They show that temperatures as high as 450 °C must be reached before p‐type conductivity is fully restored in the material.