Self-growing-grapheme-electrode light emitting diode and preparation method thereof

The invention discloses a self-growing-grapheme-electrode light emitting diode and a preparation method thereof. The light emitting diode is formed through sequential combination of a substrate layer, a first semiconductor layer, an active layer, a second semiconductor layer, a metal insert layer and a grapheme-electrode layer. The metal insert layer is used as a catalyst in preparation of a grapheme electrode through a CVD method so as to realize self growing of the grapheme, and the metal insert layer and a grapheme material of the grapheme electrode layer are enabled to form the grapheme composite electrode. The method adopts the grapheme film and the metal insert layer to form the composite electrode which is arranged on a system formed sequentially by the substrate, the first semiconductor layer, the active layer and the second semiconductor layer and thus a complete device structure is formed. In the self-growing-grapheme-electrode light emitting diode and the preparation method thereof, the metal insert layer is used as the catalyst to realize self growing of the grapheme electrode through the CVD method and through excellent contact characteristics of the metal insert layer with the semiconductor and the grapheme, the interface characteristics of the device are improved; and through the metal insert layer, charge injection between the grapheme and the semiconductor is improved and the performance of the device is optimized.