780 nm emitting Al-free active region diode lasers with compressively-strained InGaAsP quantum wells

Summary form only given. 0.78 /spl mu/m, Al-free active-region, compressively-strained (/spl Delta/a/a=0.85%) InGaAsP quantum well diode lasers have been grown by MOCVD. Broad-stripe (100 /spl mu/m-wide) devices exhibit low threshold current densities, 290 A/cm/sup 2/ (L=1 mm), and cw front-facet output powers of 2.2 W.