Electrolytic hydrogenation of p-type silicon bulk and surface modifications

An electrolytic method is used to introduce hydrogen into p-type silicon, at room temperature. The results of SIMS analysis indicate that hydrogen diffuses more rapidly in highly doped samples than in low doped samples, in contrast with the results of plasma annealing. The electrochemical technique creates a large number of surface defects, probably related to the existence of a thin hydrogenated layer beneath the surface.