Method and arrangement for contacting terminals of a bipolar transistor

A method for contacting terminals of a bipolar transistor comprising the steps of: Providing a substrate (101; 201) having a substrate surface (203), wherein the substrate (101, 201) a first terminal (205) having a first terminal surface (207) and a second terminal (211) having a second mating surface (213) , wherein a distance between the first terminal surface (207) to the substrate surface (201) is less than a pitch of the second terminal surface (213) to the substrate surface (201), wherein the first terminal (205), a base terminal or a collector terminal and the second terminal ( 211) are a (on a pile 209) arranged emitter terminal of a bipolar transistor; Forming a first insulating layer (215) over the substrate surface (203) and the first and second connection surface (207, 213); Forming a contact hole (217) in the first insulating layer (215) to expose the first connection surface (207); Filling the contact hole (217) with a conductive material (219); Forming a second insulating layer (221) on the first insulating ...