Write Windows of a Ballistic Bit Addressing MRAM Write Operation

The size of the write windows for ultrafast magnetic random access memory (MRAM) write operation based on ballistic bit addressing (BBA) is studied. During BBA the magnetization of a bit which is to be reversed undergoes a half precessional turn, whereas a bit which is not to be reversed undergoes a full precessional turn. After BBA pulse application the residual demagnetizing energy of the magnetic bit is low and magnetization ringing is suppressed. By single-spin simulations of the magnetization dynamics of an MRAM cell quasi-static and dynamic switching asteroids and maps of the residual energy after bit addressing are calculated. The results show a sufficient write margin allowing low-ringing ultrafast BBA MRAM write operation