Characteristics of Ni/Ti Stacked Gate Electrode

The effects of temperatures on Ni/Ti stacked gate electrode and Ti gate electrode on n‐ and p‐type Si‐based metal‐oxide‐semiconductor capacitors (MOS‐C) have been investigated and discussed. The electrical characteristics of n‐ and p‐type MOS‐C were different when the annealing temperatures changed. The types of metal electrode and annealing temperature of the metal were affecting the leakage current of the MOS‐C. The leakage current of Ni/Ti electrode is comparable to Ti electrode for p‐type MOS‐C. While in n‐type MOS‐C, the leakage current is increased. A further optimization of the annealing conditions in the stacking metal electrode is required to improve the leakage current in n‐type MOS‐C.