Properties of Ga1−xMnxN Epilayers Grown by Molecular Beam Epitaxy

Wurtzite (Ga,Mn)N epilayers were grown by plasma‐assisted molecular beam epitaxy. Mn incorporation strongly depends on growth conditions. Infrared optical absorption shows absorption bands related to neutral Mn acceptor A0 at 1.412 eV and 1.43 eV. Magnetic circular dichroism spectroscopyat the band gap edge, in agreement with magnetization data, exhibits temperature and magnetic field dependence revealing paramagnetic properties of Mn‐doped GaN.