Anti-binding of biexcitons in (2 1 1)B InAs/GaAs piezoelectric quantum dots

G.E. Dialynas,C. Xenogianni,Simeon I. Tsintzos,E. Trichas,P. G. Savvidis,G. Constantinidis,J. Renard,B. Gayral,Z. Hatzopoulos,N. T. Pelekanos

Anti-binding of biexcitons in (2 1 1)B InAs/GaAs piezoelectric quantum dots

2008

G.E. Dialynas
C. Xenogianni
Simeon I. Tsintzos
E. Trichas
P. G. Savvidis
G. Constantinidis
J. Renard
B. Gayral
Z. Hatzopoulos
N. T. Pelekanos

Abstract We report on single dot spectroscopy of polar (2 1 1)B InAs/GaAs quantum dots grown by molecular beam epitaxy. Exciton and biexciton peaks have been identified, revealing a negative biexciton binding energy attributed to the presence of strong piezoelectric field.

Keywords:

Biexciton
Condensed matter physics
Spectroscopy
Quantum mechanics
Molecular beam epitaxy
Photoluminescence
Physics
Quantum dot
Piezoelectricity
Atomic physics
Exciton
Binding energy

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