Stopping power for 4.8–6.8 MeV C ions along [1 1 0] and [1 1 1] directions in Si

Abstract The stopping power for C ions with energies in the range of 4.8–6.8 MeV were investigated in a SIMOX (Separation by IMplanted OXygen into silicon) structure of Si(1 0 0)/SiO 2 /Si(1 0 0). Backscattering spectra were measured for random and channeling incidence along the [1 1 0] and [1 1 1] axes. The scattering angle was set to 90° to avoid an excessive decrease of the kinematic factor. The ratios of [1 1 0] and [1 1 1] channeling to the random stopping power were determined to be around 0.65 and 0.77 for 4.8–6.8 MeV ions, respectively. The validity of the impact parameter dependent stopping power calculated using Grande and Schiwietz’s CasP (convolution approximation for swift particles) code was confirmed. The C ion trajectories and flux distributions in crystalline silicon were calculated by Monte Carlo simulation. The stopping power calculated with the CasP code is almost in agreement with the experimental results within the accuracy of measurement.