Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs

We report experimental data comparing aggressively scaled SiGe channel extremely thin SOI MOSFETs with either relaxed or strained channels. The analysis clearly demonstrates that without strain, SiGe channel delivers performance comparable with relaxed Si devices. Significantly higher performance is observed only in compressively strained SiGe channel devices, especially in narrower devices where the transverse component of the strain is partially relaxed.