Design of a resonant-cavity-enhanced p-i-n GaN/AlxGa1-xN photodetector

A resonant-cavity-enhanced p-i-n photodetector has been designed and analyzed to operate at a wavelength of 360 nm based on the AlxGa1-xN material system. The novel approach has been adopted of using epitaxial AlN/AlxGa1-xN quarter-wave stacks as the distributed Bragg reflector that serves as the front mirror. An AlxGa1-xN absorptive filter layer is incorporated to suppress all but one resonant mode to ensure single, narrow-band operation. This device structure is projected to achieve wavelength selective, high speed, and high quantum efficiency operation in the ultraviolet. MOCVD-grown 6 1/2-pair AlN/AlxGa1-x