Radiation-Stimulated Transformation of the Reflectance Spectra of Diazoquinone–Novolac Photoresist Films Implanted with Antimony Ions

We measure the reflectance spectra of 1.8 µm-thick FP9120 photoresist films doped with antimony ions and deposited by centrifugation on the surface of p-type silicon wafers (ρ = 10 Ω cm) with a (111) orientation. Implantation leads to a decrease in the refractive index of the photoresist due to the radiation crosslinking of Novolac resin molecules and a decrease in the molecular refraction and density of the photoresist. In the opacity region of the photoresist film, an increase in the reflection coefficient is observed with an increase in the implantation dose.