Image analysis of alignment and overlay marks with compound structure
2007
Decreasing of node size significantly increases requirement to overlay precision. Complex structure of target demands
using of compound structures of overlay mark, which usually contain features with acute sidewall angles, coated by
several layers.
In this paper the possibility and limitations of image-based overlay with compound structures with overlay mark and
coating layers are analyzed in detail. Dependence of overlay signal shape on overlay offset is considered. Structures with
asymmetric sidewall angle, non-uniform thicknesses of layers and curved shape of layer borders are examined. Influence
of thickness variation, difference between left and right sidewall angles of asymmetric shape and curvature of layer
borders are investigated. For the simulation of such complex structures of overlay marks, our in-house simulator based
on rigorous coupled-wave analysis (RCWA) module is used. Maximum allowed values of these parameters are studied
in order to determine the limitations of image-based overlay.
Results of this consideration can be used for improvement of overlay precision and elaboration of optimal overlay
strategy in conditions of node shrinking in the semiconductor industry.
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