Method for high-temperature growth of high-quality GaInNAs sub battery through MOCVD

The invention discloses a method for high-temperature growth of a high-quality GaInNAs sub battery through MOCVD. When the GaInNAs sub battery of a GaAs laminated battery is grown at a high temperature through the MOCVD, the doping difficulty of a nitrogen element in the high-temperature growth of the GaInNAs sub battery can be lowered through rapid switching of a carrier gas so as to enabling the required high-quality GaInNAs sub battery to be grown; and the rapid switching of the carrier gas is implemented by an interlocking apparatus; in addition, a tunnel junction GaAs/AlGaAs needs to be grown before and after the growth of the GaInNAs sub battery; the carrier gas for enabling the tunnel junction GaAs/AlGaAs to be grown before and after the growth of the GaInNAs sub battery is H2; the carrier gas for enabling the GaInNAs sub battery to be grown is N2; and the doped nitrogen source in the GaInNAs sub battery is dimethylhydrazine. By adoption of the method, the high-quality GaInNAs sub battery can be grown, and the overall performance of the GaAs laminated battery can be improved finally.