Demonstration of low voltage and functionally complete logic operations using body-biased complementary and ultra-thin ALN piezoelectric mechanical switches

This paper reports, for the first time, on the demonstration of low voltage and functionally complete logic elements (NAND and NOR) implemented by using body-biased complementary and ultra-thin (250 nm thick) Aluminum Nitride (AlN) based piezoelectric mechanical switches. This work presents, firstly, the importance of scaling AlN films for the demonstration of ultra-thin AlN switches and, secondly, the implementation of a new actuation scheme based on body biasing to lower the switch threshold voltage. Four of these ultra-thin switches were connected together to synthesize functionally complete MEMS logic gates (NAND and NOR) with a ± 2V swing and a body-bias voltage ≪ 8 V.