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High hole mobility of polycrystalline GeSn layers grown by HWCVD on diamond substrates
High hole mobility of polycrystalline GeSn layers grown by HWCVD on diamond substrates
2021
Yu. N. Buzynin
V. G. Shengurov
S. A. Denisov
P. A. Yunin
V. Yu. Chalkov
M. N. Drozdov
S. A. Korolyov
Aleksey Nezhdanov
Keywords:
Optoelectronics
Diamond
Crystallite
Electron mobility
Materials science
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