Tracking and radiation tests of silicon microstrip detectors

We have measured a signal-to-noise of 37:1 at room temperature for 227 GeV pions at Fermilab on the n(ohmic)-side of a Hamamatsu AC-coupled double-sided silicon microstrip detector with 0.64 cm long strips. Position resolutions at normal incidence of 3.5[plus minus]0.4 [mu]m (10.4[plus minus]0.5 [mu]m) were obtained for the p-side (n-side) which had 25 [mu]m (50 [mu]m) pitch and 50 [mu]m readout. The effects of radiation damage on the n-side have also been measured with a [sup 60]Co source. Phase-gain measurements imply that the accumulation layer bias capacitance and AC-coupling capacitance are constant with dose up to 5 Mrad with values of 1.2 pf and 12 pf per strip respectively. The bias resistance per strip has a value of [similar to]0.8 M[Omega] at 0 and 5 Mrad and [similar to]0.4 M[Omega] at doses of 20--100 Krad.