The method of manufacturing a semiconductor thin film, a semiconductor thin film manufacturing apparatus, the susceptor, and the susceptor holder

Substrate (10-12) is mounted on each of a plurality of susceptor (20-22). A plurality of susceptor substrate is mounted on each of which is disposed to the rotation mechanism so that a predetermined gap is provided in the vertical direction. Rotation mechanism is rotated a plurality of susceptor is disposed. Each plurality of susceptor substrate is mounted on is heated. To each of the susceptor that is heated while rotating, by supplying the raw material gas path length is heated via substantially equal gas flow path, the semiconductor thin film is deposited.