Atomic layer growth of GaAs by molecular beam epitaxy using desorption of excess Ga atoms

Abstract The self-limiting desorption of the excessively supplied Ga atoms on a GaAs surface is closely examined and is applied to atomic layer epitaxy (ALE). It is confirmed by measuring growth thickness that, only excess Ga atoms, which are not bonded to As atoms, are desorbed during the interval of alternating source supply. In the case of Al x Ga 1−x As, the excess Al atoms are scarcely desorbed, however, and atomic layer control is also possible with the desorption of the excess Ga atoms.