Nitrogen-Activated Phase Separation in InGaAsN/GaAs Heterostructures Grown by MBE

Abstract : InGaAsN insertions in a GaAs matrix grown by molecular beam epitaxy (MBE) demonstrate a pronounced effect of phase separation even at relatively low indium and nitrogen concentrations. Cross-section high-resolution transmission electron microscopy (TEM) images processed using a specially developed software demonstrated an effect of nitrogen decomnon of InAs-rich regions in the structures studied. Formation of ordered structures of compositional domains has been revealed in plan-view TEM images.