Advanced PMOS Device Architecture for Highly-Doped Ultra-Shallow Junctions

In this paper we study the integration of Boron ultra-shallow junctions (USJ) obtained by Germanium pre-amorphization, Fluorine co-implantation and fast ramp-up and ramp-down anneals into advanced p-channel metal-oxide-semiconductor (PMOS) devices. Several integration issues associated to these USJ are investigated: short-channel effects control, implantation tilt angle influence, junction de-activation, thermal budget, silicide process. We show that remarkable PMOS device performance enhancement (Ion=450 µA/µm at Ioff=250 nA/µm for devices with Lg\cong50 nm) can be achieved when full potential of highly-active and abrupt USJ is exploited by combining it with a low thermal budget integration scheme and a low contact resistance NiSi.