Anticrossing Due to Resonant Coupling of Hole Levels in Asymmetric Coupled-Quantum-Wells

We present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased GaAs/Al0.35Ga0.65As/GaAs (50/40/100 A) asymmetric coupled-double-quantum-wells p-i-n structure by using photoluminescence spectra. The minimum level splitting is about 2.5 meV.