Scattering extraction of ions at CRYRING for SEU testing

Abstract A measuring station has been built at the CRYRING heavy ion accelerator to test the Single Event Upset (SEU) phenomena in working Static RAM circuits. The setup extracts the beam using Rutherford scattering and the ions are monitored with a BaF 2 scintillator. SEU measurements have been performed for standard bulk CMOS memory circuits.