Plasma etching chamber for controlling temperature of wafer and method thereof

The invention provides a plasma etching chamber for controlling the temperature of a wafer and a method thereof. The plasma etching chamber for controlling the temperature of the wafer comprises an upper electrode, a lower electrode and a static sucker, wherein the upper electrode is connected with a ground lead, the lower electrode is connected with a radio frequency source, the static sucker is located between the upper electrode and the lower electrode, a quartz window is arranged below the upper electrode, a heating device is arranged between the quartz window and the upper electrode, a coolant circulation device is arranged inside the static sucker, and a reflection device is arranged between the heating device and the upper electrode or a reflection coating is coated on the inner surface, opposite to the upper electrode, of the heating device or the inner surface of the side face. Through the reflection coating or the reflection device, light rays of the heating device can be gathered on the wafer and are evenly distributed on the surface of the wafer, and a utilization rate of heat energy of the heating device is improved. Through the coolant circulation device at the lower portion of the static sucker, the temperature of the surface of the wafer is further controlled accurately, good control on the temperature of the wafer is achieved, and at the same time, the plasma etching chamber is simple in structure and easy to maintain.