X-band GaAs pHEMT MMIC low-noise amplifier

This report presents results of design and manufacturing of X-band GaAs pHEMT low-noise amplifier. Operating frequency band is 8–12 GHz, gain is 30 dB, noise factor is 1.5 dB, P1dB output power is 10 dBm, unipolar supply voltage is +5 V, consumption current is 100 mA, and chip dimensions are 2.5×1.5×0.1 mm.