Low-temperature preparation of poly-si tft by ar laser annealing at high scanning speed

In an attempt to fabricate poly-Si TFT with a field-effect mobility two orders of magnitude higher than a-Si TFT which can still be made at an equivalent cost as a-Si TFT, studies have been made of high-speed scanning Ar laser annealing. This paper proposes that: ±1 based on the result of spin-density measurements by ESR, the effect of thermal annealing on the improvement of poly-Si film quality after a laser annealing is most significant at 400°C. Even at 350°C, high-quality poly-Si TFT can be fabricated; and ±2 high-performance poly-Si TFT can also be obtained with a-Si films as starting materials which are made not only by plasma CVD but also by the LPCVD method. Therefore, one can choose a fabrication machine suitable for high yield for amorphous silicon films to be used for high-speed Ar laser annealing.