Electron beam lithography apparatus and a lithography method

The present invention is a square grid matrix beam forming group in the two-dimensional interval of an integer multiple of the size of the beam, the opening / closing device to be lithographic grid bit map signal by trimming desired beam shape, beam steering in the desired position after steady state beam, all the shutter open, and high-speed and highly accurate photolithographic patterning by irradiating beam. Each beam is provided to the opening / closing signal and a scanning signal vector after the beam stabilization, all the shutter release, and thus the amount of data in a small number of high-precision, high-speed lithography. When the number exceeds a certain value all the photographing, and high-speed data modification pattern lithography. The semiconductor PN junction reverse bias technique is preferably used for shielding the individual electrodes.