Silicon pixel capacitance

Abstract Capacitance measurements have been made on silicon pixel sensors of types n + -on-n, p + -on-n, and n + -on-p. The arrays test a variety of implant and gap widths, and the n + -on-n devices test several p-stop designs. The measurements examine inter-pixel and backplane contributions and include studies of temperature dependence. Measurements were made before and after irradiation with fluences relevant to LHC experiments and Fermilab Tevatron Run 2.