Tunneling microscopy and spectroscopy of molecular beam epitaxy grown GaAs-AlGaAs interfaces

We report the first observation of GaAs/AlGaAs compound multilayers and interfaces at atomic scale resolution. Using a scanning tunneling microscope, the atomic registry in the epitaxial layers and their interfaces was observed. The semiconductor band gaps and valence‐band offsets relative to the Fermi level are obtained via local spectroscopy in the GaAs and AlGaAs multilayers.