A study on deposition and characterization low-k Parylene film

In this paper, We have dealt with the analysis and fabrication of interconnection structure using low-k parylene dielectrics and copper electrode(Cu/parylene).This structure us superior to traditional SiO₂/aluminium structure on low temperature processes, high speed operation and high density integration. The quasi-static FEM(finite element method)analysis was performed on COW(coplanar waveguide) electrodes insulated by each SiO₂and parylene layer. The dependence of CPW capacity as the function of the dielectric constants and thickness of insulator was calculated. Physical adhesive and chemical tests of parylene layer deposited on glass and under various metal layer have been performed. After that, COW has been formed by traditional photolithographic processes. Parylene has a good adhesive property to glass substrate and Cu, Au better than Al. And patterning and etching of metal on parylene using various chemicals was performed. We have not found any outstanding problems for the post metal process.