Progress in low energy high intensity ion implantation method development

Abstract New results on the equipment development and advancement of the method of high-intensity ion implantation of metal, gases and low-energy semiconductors providing a long range effect of dopants penetration are presented in the article. The results of the research and development of plasma-immersion systems for the formation of ion beams with a current density of tens and hundreds of mA/cm2, a beam current exceeding 1 A at kilovolt accelerating voltages using ion extraction and beam focusing systems as part of a sphere or cylinder are shown. A comparative analysis of various systems, their advantages and disadvantages depending on the purpose are presented. The concept of low energy high intensity ion implantation (LEHI [3]) method is described. The features of the method as applied to the problems of deep modification of the microstructure and operational characteristics of metals and alloys are analyzed. The report presents the results of experimental studies of LEHI [3] of aluminum, titanium, nitrogen into various structural materials. The possibility of ion doping of materials at depths of several tens and hundreds of micrometers is shown. Data are presented on the changes in the elemental composition, microstructure and properties of various materials depending on the ion current density of 10–500 mA/cm2, ion energy, implantation temperature and irradiation fluence of 1018–1022 ion/cm2. Based on the analysis of the obtained experimental data, the directions of further research are discussed in the framework of the development of the physical and technological foundations of the LEHI [3] method of material properties modification at depths that are orders of magnitude greater than the projective ranges of ions.