One kind of BiCMOS integrated device and method for preparing a mixed crystal plane strain based on more than three of the crystal SiGe HBT

The present invention discloses the SiGe crystal based on more than three? The mixed crystal plane strain HBT BiCMOS integrated device and method of preparation, the process of: preparing an SOI substrate, an upper substrate material is a (100) plane, the underlying base material (110) crystal plane; etching the bipolar device active region , N-type Si epitaxial growth, the preparation of the collector region, base region and then prepared, emitter region, and then forming the SiGe? HBT devices; NMOS device regions etched deep trench, selectively growing crystal faces (100) of the NMOS device active region, Si strained channel NMOS devices were prepared; the PMOS device region, selective growth of crystal face (110) the SiGe epitaxial layer, compressive strain prepared on the SiGe channel layer PMOS device; SiGe crystal configuration based on more than three? HBT mixed crystal plane strain and BiCMOS integrated circuit devices. The present invention fully utilizes the strained Si material mobility higher than the mobility of bulk Si material and the anisotropic characteristics, based on an SOI substrate prepared based on the performance of more than three reinforcing the SiGe crystal? The mixed crystal plane strain HBT BiCMOS integrated circuit.