Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique

Introduction A low temperature processing of semiconductor surfaces is intriguing for dimensional scaling of future ULSI semiconductor devices. Oxidation and nitridation of semiconductor surfaces and surface-adsorbed precursors in atomic layer deposition (ALD) processes utilizing oxygen and nitrogen plasma are promising low temperature techniques to form gate dielectric films. In this paper, we will report on the formation of Al2O3 film on Si substrate by microwave generated remote plasma assisted ALD technique.