Minority Carrier Lifetime and Interfacial Recombination Velocity in GaAs/AlGaAs Double Heterostructures

Abstract : A novel technique is used to determine the minority carrier lifetimes, the interface recombination velocity, the internal radiative quantum efficiency, and the radiative recombination constant from PL decay measurements on a set of three samples and published theory. This technique is used to determine for the first time the minority carrier lifetimes of p-GaAs in double heterostructures that were grown by molecular beam epitaxy (MBE) at ARL. The results show the high quality of our bulk GaAs and the GaAs/AlGaAs interface in double heterostructure samples, and provide guidance for studies aimed at improving the quality of GaAs grown by MBE at the U.S. Army Research Laboratory (ARL).