256×256 GaN ultraviolet imaging array

We have successfully developed a 256×256 photoconductive GaN area imaging array using a metal-semiconductor-metal structure. The array, with its pixels (30 μm2) indium bump bonded to a readout integrated circuit, showed a 90% of yield. The spectral response of the array is consistent with the measured spectral response of the single photoconductors fabricated elsewhere on the source wafer.