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Effect of Thermal Ramping and Annealing Conditions on Defect Formation in Oxygen Implanted Silicon-On-Insulator Material
Effect of Thermal Ramping and Annealing Conditions on Defect Formation in Oxygen Implanted Silicon-On-Insulator Material
1992
Stephen J. Krause
J Park
J. D. Lee
M. K. El-Ghor
P. Roitman
Keywords:
Oxygen
Thermal
Silicon on insulator
Annealing (metallurgy)
Chemistry
Chromatography
Inorganic chemistry
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