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Characterization of Electrical Properties of Ion Implanted 4H-SiC by THz-TDSE
Characterization of Electrical Properties of Ion Implanted 4H-SiC by THz-TDSE
2019
Kiichi Sato
Takashi Fujii
Tsutomu Araki
Shinichiro Mouri
Kotaro Ishiji
Toshiyuki Iwamoto
Ryuichi Sugie
Keywords:
Ion
Silicon carbide
Ion implantation
Terahertz radiation
Optoelectronics
Materials science
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