Ultrafast direct writing scheme with unipolar field pulses for synthetic antiferromagnetic magnetic random access memory cells

A writing scheme is presented for Savtchenko-type magnetic random access memory (MRAM) cells, which allows for ultrafast direct writing with high stability against half select switching, using two orthogonally oriented unipolar magnetic field pulses with time delay, which allows for backswitching by reversing the temporal sequence of the two pulses. The numerical simulations are based on the Stoner–Wohlfarth model and a Runge Kutta integration of the Landau–Lifshitz and Gilbert equation.