Lattice vibrations and electronic properties of GaSe nanosheets from first principles

Electronic properties and lattice dynamics of bulk epsilon-GaSe and one, two, and three tetralayers GaSe are investigated by means of density functional and density functional perturbation theory. The few-tetralayer systems are semiconductors with an indirect nature of the fundamental band gap and a Mexican-hat shape is observed at the top of the valence band. The phonon branch analysis reveals the dynamical stability for all systems considered together with the LO-TO splitting breakdown in two-dimensional systems. In-plane (E) and out-of-plane (A) zone-center lattice vibrations dominate the Raman and IR spectra.