High performance GaN linear array

A 1/spl times/16 GaN linear array is reported using a metal-semiconductor-metal structure. The array showed a very high responsivity of 3250 A/W at 360 nm under an applied bias of 10 V, and a response time of 0.5/spl plusmn/0.2 ms. The responsivity has more than three orders of magnitude difference between the UV region and the visible region. The array also shows a very good uniformity.